GaAs Monolayer Growth Control by Molecular Beam Epitaxy.

Impurity Breakdown in GaAs Samples Grown by Molecular Beam Epitaxy

In this work we present studies for the behavior of impurity breakdown of two GaAs samples grown by Molecular Beam Epitaxy at 200oC and 300oC. We vary the temperature and the illumination intensity. For the sample grown at 200oC, the transport mechanism after the breakdown is of the same type of the main free carriers at low electric elds. Below 100K, a clear dependence of the threshold electri...

AlGaAs/GaAs Heterostructure Solar Cells Grown by Molecular Beam Epitaxy

The AlGaAs/GaAs heterostructure solar cells were fabricated by molecular beam epitaxy (MBE), which provides ultra-thin molecular layers of the design structure. The typical efficiency of the solar cells fabricated and their characteristics are η = 17%, Voc = 0.73 V, Isc = 33 mA/cm, and F.F. = 0.7. Spectral response of the solar cells show a broad spectrum ranging from 500 to 900 nm, correspondi...

Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

Growth of InP on GaAs „001... by hydrogen-assisted low-temperature solid-source molecular beam epitaxy

Direct heteroepitaxial growth of InP layers on GaAs 001 wafers has been performed by solid-source molecular beam epitaxy assisted by monoatomic hydrogen H . The epitaxial growth has been carried out using a two-step method: for the initial stage of growth the temperature was as low as 200 °C and different doses of H were used; after this, the growth proceeded without H while the temperature was...

Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxy

Tetragonal zinc phosphide (a-Zn3P2) was grown pseudomorphically, by compound-source molecularbeam epitaxy on GaAs(001). The films grew coherently strained, with epitaxial relationships of Zn3P2(004):GaAs(002) and Zn3P2(202):GaAs(111). Partial relaxation of the Zn3P2 lattice was observed for films that were 4150 nm in thickness. Van der Pauw and Hall effect measurements indicated that carrier mo...